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S
D
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ARF1501
ARF1501
BeO 1525-xx
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE * Specified 250 Volt, 27.12 MHz Characteristics: * Output Power = 750 Watts. * Gain = 17dB (Class C) * Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
S
G
S
250V
750W
40MHz
The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
* High Performance Power RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25C unless otherwise specified.
ARF1501 UNIT Volts Amps Volts Watts C
1000 30 30 1500 -55 to 175 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage
1
MIN
TYP
MAX
UNIT Volts A nA mhos Volts
1000 7.5 9 40 1000 400 5.5 TBD 3 5 7
(I D(ON) = 15A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 15A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted) RJC RJHS Junction to Case Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT
3-2008 050-5982 Rev D
0.10 0.16
C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 500V ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX
ARF1501
UNIT
5400 300 125 8 5 25 13
6500 400 160
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol GPS
1
Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1
Test Conditions f = 27.12 MHz VGS = 0V VDD = 250V
MIN
TYP
MAX
UNIT dB %
15 70
17 75
Pout = 750W
No Degradation in Output Power
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000 10,000 5000 CAPACITANCE (pf) Ciss
1000 500 Coss Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
60 ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 TJ = +25C TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES)
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
120
DATA FOR BOTH SIDES IN PARALLEL OPERATION HERE LIMITED BY R (ON) DS
50
TJ = -55C
100us
10 5 TC =+25C TJ =+200C SINGLE PULSE 1 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 1ms
050-5982 Rev D
3-2008
10ms 100ms
1.15 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 4, Typical Threshold Voltage vs Temperature
45 40 35 30 25 20 15 10 5 0
ARF1501
10V 9V
8V
7V 6V 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics
0.14 , THERMAL IMPEDANCE (C/W) 0.12 0.10 0.7 0.08 0.06 0.04 0.02 0 0.5
Note:
D = 0.9
PDM
0.3 SINGLE PULSE
t1 t2
qJC
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
1.0
Table 1 - Typical Class AB Large Signal Impedance -- ARF1501 F (MHz) 2.0 13.5 27 40 Zin () 10.6 -j 12.2 0.5 -j 2.7 0.22 -j 0.8 0.2 +j .12 ZOL () 31 -j 4.7 15.6 -j 16 6.2 -j 12.6 3.1 -j 9.4 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 250V
.250
S
D
S
.500
Thermal Considerations and Package Mounting:
The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 200C. The thermal resistance between junctions and case mounting surface is 0.12C/W. When installed, an additional thermal impedance of 0.1C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125lb required mounting force. T = 12 in-lb.
Heat Sink
ARF15-BeO 1525-xx
1.065
.045
S
G
S
.500
.005 .207 .375 .105 typ. .207
HAZARDOUS MATERIAL WARNING
D
G S
050-5982 Rev D
The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste.
3-2008
ARF1501 -- 27.12 MHz Test Circuit
250V L4 C7 C6 L2 L1 C1 RF Input C2 C3 C11 R2 TL1 R1 Vbias R3 C4 C12 C5 C9 L3 C8 C10 Output C1, C7,C8, C11 .1uF 250V ceramic chip C2, C12 ARCO 465 75-380pF mica trimmer C3 4700pF ATC700B C4, C9-C11 8200pF 500V NPO ceramic C5 - C6 150pF ATC 700B L1 90 nH 4t #18 0.25"d .25"l L2 175 nH - 3t #10 .75" dia .75" l L3 2uH - 22t #24 enam. .312" dia. L4 500nH 2t on 850u .5" bead R1-R3 1k 1/4W TL1 .112" x 1.2" (50 ) Stripline
BeO
ARF1501
ARF1500
135-05
J1
J2
27 MHz Amp ARF1501
RF 5-02
Parts placement
3-2008
050-5982 Rev D
27 MHz Amp ARF1501
RF 5-02
1:1 pcb artwork

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